Hafnium Sputtering Target

HAFNIUM SPUTTERING TARGETS

hafnium sputtering targetHafnium Sputtering Target
Atomic Number: 72
Composition: Hf
Density: 13.31 g/cc
Melting Point: 2233 °C
Purity: 99.9%

Plasmaterials, Inc. provides high purity hafnium and hafnium alloys for all PVD applications. Sputtering targets are produced to fit all commercially available cathode configurations as well as for custom and customer specified designs. These hafnium sputtering targets may either be supplied in monolithic form or metallically bonded to backing plates as required. Evaporation materials are supplied in pellet form by unit weight. Typical pellet sizes are either 1/8” or ¼” in dia. by 1/8” to ¼” in length. They can also be made to specific customer specifications as well. Electron beam starter sources are available in various sizes to fit directly into the E-beam hearth or to fit within a hearth liner.

Hafnium sputtering targets can be sputtered elementally or reactively with a partial pressure of oxygen introduced in the working gas to produce hafnium oxide thin films. Resultant films are used in a variety of applications including optical coatings for photonics, thin film resistors, corrosion resistance, nuclear products, gate insulators in integrated circuits and for sensors.