Silicon Dioxide Sputtering Targets

SILICON DIOXIDE SPUTTERING TARGET

Atomic Number: 
Composition: SiO²
Density: 2.648 g/cm3
Melting Point: 1610 °C

Plasmaterials, Inc. provides high purity silicon dioxide for all PVD applications. Sputtering targets are produced to fit all commercially available cathode configurations as well as for custom and customer specified designs. Silicon dioxide sputtering targets should be metallically bonded to backing plates.

Evaporation materials are either 1-3mm or 3-6mm random size pieces sold by weight. SiO² can also be made to specific customer specifications. Electron beam starter sources are available in various sizes to fit directly into the E-beam hearth or to fit within a hearth liner.

Resultant films are used in a variety of applications including windows. It is evaporated under vacuum for the fabrication of optoelectronic, production of microelectronics, circuit devices and optical coatings.

 

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